cha2411 - qdg ref. : dscha2411 - qdg3021 C 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvett e - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 20 - 25ghz low noise amplifier gaas monolithic microwave ic in smd leadless package description functional diagram the cha2411 - qdg is a k - band low noise amplifier providing 26db gain with a noise figure of 2.5db from a single bias supply +5v. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in rohs compliant smd package. main features ? main characteristics tamb.= +25c symbol parameter min typ max unit fop frequency range 20 25 ghz g linear gain 22 26 30 db nf noise figure 2.5 db rloss input / output return losses. 15 db ums a2411 yyww ? ? cha2411qdg - lot 1004ga s21(db) gain versus frequency 10 12 14 16 18 20 22 24 26 28 30 16 17 18 19 20 21 22 23 24 25 26 frequency (ghz) s21(db) -40c +25c +105c ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha2411 - qdg 20 - 25ghz low noise amp lifier ref. : dscha2411 - qdg3021 C bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 main characteristics symbol parameter min typ max unit fop frequency range 20 25 ghz g linear gain 22 26 30 db - 1db in input power at 1db gain comp @24ghz - 14 dbm ip3 in input ip3 @24ghz - 7.5 dbm pout_sat saturated output power @24ghz 13.5 15 dbm +vd, +vg supply voltage 5 v +i supply current 43 55 ma top operating temperature range - 40 25 105 c these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". these performances have been obtained with the chip in qfn package mounted on the recommended boards (reference 95541) described in this document. these performances are highly dependent on this environment. absolute maximum ratings tamb.= +25c (1) symbol parameter values unit +vg, +vd maximum positive supply voltage 6v v +i maximum positive supply current 65 ma pin maximum peak input power overdrive - 5 dbm top operating temperature range - 40 to +105 c tstg storage temperature range - 55 to + 150 c (1) operation of this device above anyone of these parameters may cause permanent damage (duration < 1s
20 - 25ghz low noise amplifier cha2411 - qdg ref. : dscha2411 - qdg3021 C 3 / 10 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains bel ow the maximum value specified in the next table. so, the pcb system must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature cannot be maintained below the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf).
cha2411 - qdg 20 - 25ghz low noise amp lifier ref. : dscha2411 - qdg3021 C bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters tamb.= +25c, vd = +4.5v, id = 43ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 10.0 - 1.07 - 49.55 - 14.38 - 58.07 - 59.27 - 175.76 - 3.68 - 21.83 11.0 - 0.91 - - 68.36 - 55.9 - 102.44 - 11.75 148.54 - 4.36 - 36.48 12.0 - 0.78 - 87.98 - 54.01 - 148.74 - 7.68 126.87 - 3.85 - 53.87 13.0 - 0.73 - 107.81 - 49.64 178.55 - 2.72 98.18 - 3.72 - 73.42 14.0 - 0.74 - 128.9 - 46.02 139.21 2.54 64.31 - 3.71 - 93.32 15.0 - 0.98 - 151.4 - 46.54 107.66 7.85 24.67 - 3.92 - 113.67 16.0 - 1.61 - 176.03 - 42.24 89.48 13.10 - 21.61 - 4.10 - 133.26 17.0 - 3.00 156.34 - 42.85 34.58 17.64 - 74.45 - 4.56 - 154.71 18.0 - 5.18 123.53 - 45.15 17.88 21.34 - 132.27 - 5.50 - 179.79 19.0 - 10.11 84.87 - 50.38 - 17.51 24.50 168.46 - 7.22 152.98 20.0 - 21.11 - 6.32 - 52.53 - 49.82 26.22 104.07 - 12.06 111.32 21.0 - 15.70 - 136.32 - 55.01 127.63 26.76 42.30 - 19.95 67.22 22.0 - 13.98 - 172.06 - 47.39 77.30 26.20 - 13.39 - 21.91 - 57.46 23.0 - 13.50 - 179.07 - 64.30 - 43.79 26.17 - 64.30 - 14.09 - 87.97 24.0 - 11.79 175.47 - 41.92 19.85 25.62 - 115.15 - 10.50 - 118.95 25.0 - 10.43 165.19 - 42.35 4.31 25.27 - 163.45 - 8.33 - 136.39 26.0 - 8.74 154.28 - 41.19 - 6.44 24.56 146.28 - 5.78 - 152.57 27.0 - 7.78 131.33 - 41.32 - 17.81 23.64 96.46 - 4.30 - 170.04 28.0 - 7.62 113.23 - 39.65 - 29.56 22.06 49.94 - 3.15 170.66 29.0 - 7.60 91.53 - 38.35 - 57.29 20.70 7.00 - 2.55 155.07 30.0 - 9.76 62.59 - 39.18 - 83.28 19.04 - 39.18 - 2.26 137.12 typical sij parameters versus frequency in the qfn package plans typical sij parameters vs frequency in the qfn package plans -20 -15 -10 -5 0 5 10 15 20 25 30 35 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 frequency (ghz) sij (db) s21(db) s11(db) s22(db)
20 - 25ghz low noise amplifier cha2411 - qdg ref. : dscha2411 - qdg3021 C 5 / 10 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical measurements on board 95541 (qfn plan) tamb.= - 40; +25c; +105c ,vd = +4.5v / 55ma max noise figure versus frequency linear gain versus frequency noise figure vs frequency 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 22 22,5 23 23,5 24 24,5 25 25,5 26 frequency (ghz) nf (db) 100c 25c -40c +105c cha2411qdg - lot 1004ga s21(db) gain versus frequency 10 12 14 16 18 20 22 24 26 28 30 16 17 18 19 20 21 22 23 24 25 26 frequency (ghz) s21(db) -40c +25c +105c
cha2411 - qdg 20 - 25ghz low noise amp lifier ref. : dscha2411 - qdg3021 C bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline matt tin, lead free (green) 1 - nc 13 - nc units : mm 2 - nc 14 - gnd (2) from the standard : jedec mo - 220 3 - gnd (2) 15 - rf_out (vggd) 4 - rf_in 16 - gnd (2) 25 - gnd 5 - gnd (2) 17 - nc 6 - nc 18 - nc 7 - nc 19 - nc 8 - nc 20 - nc 9 - vg 21 - nc 10 - nc 22 - vd 11 - nc 23 - nc 12 - nc 24 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
20 - 25ghz low noise amplifier cha2411 - qdg ref. : dscha2411 - qdg3021 C 7 / 10 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 external components and bias configuration (recommended) definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". 25 1 2 3 4 5 6 18 17 16 15 14 13 12 11 10 9 8 7 19 20 21 22 23 24 3.18 3.18
cha2411 - qdg 20 - 25ghz low noise amp lifier ref. : dscha2411 - qdg3021 C bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board recommended test fixture (ref. 500243) for measurements over temperature range
20 - 25ghz low noise amplifier cha2411 - qdg ref. : dscha2411 - qdg3021 C 9 / 10 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board recommended test fixture (ref. 95541) for measurements over temperature range (unit=mm) rf_out rf_in gnd gnd vd=+5v 10nf 10nf gnd gnd vg=+5v
cha2411 - qdg 20 - 25ghz low noise amp lifier ref. : dscha2411 - qdg3021 C bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn4x4 rohs compliant package: cha2411 - qdg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithi c semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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